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2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3444 Switching Regulator, DC-DC Converter Applications Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 65 m (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 A (VDS = 200 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 200 200 30 25 100 125 488 25 12.5 150 -55 to 150 Unit V V V A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.00 Unit C/W Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into the S2 pin. 4 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 50 V, Tch = 25C (initial), L = 1.26 mH, IAR = 25 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 Marking 2 3 Part No. (or abbreviation code) K3444 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-06 2SK3444 Electrical Characteristics (Note 4) (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 ID = 12.5 A VOUT RL = 8.0 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 12.5 A VDS = 10 V, ID = 12.5 A Min 200 3.0 5 VDD 160 V, VGS = 10 V, - ID = 25 A Typ. 65 10 2080 280 1060 20 40 10 40 44 21 23 Max 10 100 5.0 82 ns nC pF Unit A A V V m S VDD 100 V - Duty < 1%, tw = 10 s = Note 4: Connect the S1 pin and S2 pin together, and ground them except during switching time measurement. Source-Drain Diode Ratings and Characteristics (Note 5) (Ta = 25C) Characteristics Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR1 IDRP1 IDR2 IDRP2 VDS2F trr Qrr Test Condition IDR1 = 25 A, VGS = 0 V IDR = 25 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 290 2.2 Max 25 100 1 4 -1.5 Unit A A A A V ns C Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open. IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open. Unless otherwise specified, connect the S1 and S2 pins together, and ground them. 2 2004-07-06 2SK3444 ID - VDS 50 Common source 40 Tc = 25C Pulse test 30 9 80 15 10 100 9.5 Common source Tc = 25C Pulse test ID - VDS 15 12 11 (A) ID ID (A) 8.5 60 10 Drain current 20 8 7.5 Drain current 40 9 10 7 VGS = 6.5 V 20 8 VGS = 7 V 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 50 Common source 4 VDS = 10 V Pulse test VDS - VGS Common source Tc = 25C Pulse test 3 40 (A) ID Drain-source voltage 30 Tc = -55C 20 100 10 25 0 0 Drain current VDS (V) 2 ID = 25 A 1 12 6 4 8 12 16 20 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 100 Common source VDS = 10 V Pulse test 1000 Common source Tc = 25C Pulse test RDS (ON) - ID Forward transfer admittance Yfs (S) Tc = -55C 10 100 25 Drain-source on resistance RDS (ON) (m) 100 VGS = 10 V 15 1 1 10 100 10 1 10 100 Drain current ID (A) Drain current ID (A) 3 2004-07-06 2SK3444 RDS (ON) - Tc (m) 160 Common source VGS = 10 V Pulse test 12 6 100 Common source Tc = 25C IDR - VDS Drain reverse current IDR (A) RDS (ON) Pulse test 10 120 Drain-source on resistance ID = 25 A 80 10 1 5 40 3 1 VGS = 0 V -0.8 -1.0 -1.2 -1.4 -1.6 0 -80 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 -0.6 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 6 Vth - Tc Vth (V) Gate threshold voltage 5 Ciss (pF) 1000 Coss 4 C 3 Capacitance 2 Common source 1V DS = 10 V ID = 1 mA Pulse test 0 -80 -40 0 100 Common source VGS = 0 V f = 1 MHz 10 0.1 Tc = 25C 1 10 Crss 40 80 120 160 100 Case temperature Tc (C) Drain-source voltage VDS (V) PD - Tc 200 200 Dynamic input/output characteristics 20 Common source ID = 25 A Tc = 25C Pulse test VDS = 40 V 120 160 80 VGS 8 80 12 16 (W) (V) 160 160 Drain power dissipation Drain-source voltage 80 40 40 4 10 0 40 80 120 160 200 0 0 20 40 60 80 0 100 Case temperature Tc (C) Total gate charge Qg (nC) 4 2004-07-06 Gate-source voltage 120 VGS (V) VDS PD VDS 2SK3444 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10 PDM t T Duty = t/T Rth (ch-c) = 1.0C/W 1m 10 m 100 m 1 10 Single pulse 100 Pulse width tw (S) Safe operating area 1000 500 EAS - Tch (mJ) 100 400 EAS Avalanche energy ID max (pulsed) * 100 s* ID max (continuous) 1 ms* 300 (A) Drain current ID 200 10 DC operation Tc = 25C 100 0 25 1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.1 1 10 100 VDSS max 1000 50 75 100 125 150 Channel temperature (initial) Tch (C) 15 V -15 V BVDSS IAR VDD VDS Waveform AS = 1 B VDSS L I2 B 2 VDSS - VDD Drain-source voltage VDS (V) Test circuit RG = 25 VDD = 50 V, L = 1.26 mH 5 2004-07-06 2SK3444 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-07-06 |
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